Shown here are two plots of the reverse recovery of the UCC27200 compared with the same competitor as the previous slides. Reverse recovery is a condition that occurs when a silicon diode goes from a conducting state to a reverse blocking state. At the moment when reverse recovery occurs the conditions are such that a reverse voltage (usually large) is applied across the junction immediately after a forward conduction condition. Since the diode needs time to recover from this, current will flow. The resulting dissipation power loss equals the recovery current, multiplied by the blocking voltage, multiplied by the reverse recovery time of the diode (Trr), multiplied by the frequency of occurrence or PWM frequency. If any of these factors increase, it will proportionately increase the losses associated with diode reverse recovery. In the case here, the Trr or reverse recovery time of the internal diode of the UCC27200 is nearly 50% faster than that of the competitor resulting in 50% less power dissipation than the competing device.