Read disturbance is an issue that can occur in NAND Flash based solutions. It is a condition common in applications where individual NAND cells are frequently read to such as boot up and content storage applications. The individual cell can cause nearby cells to be unintentionally programmed to a read status before an erase command can be performed. The result is data loss or data corruption. There are several methods of reducing or eliminating read disturbance such as Wear Leveling and ECC (Error Correction Code). ATP offers these features but also adds a third, active, solution called AutoRefresh. Combining AutoRefresh with Wear Leveling and ECC provides the maximum level of protection from read disturbance.