IXFN55N120SK IXYS | Discrete Semiconductor Products

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IXFN55N120SK
DigiKey Part Number	238-IXFN55N120SK-ND
Manufacturer	IXYS
Manufacturer Product Number	IXFN55N120SK
Description	SIC AND MULTICHIP DISCRETE
Customer Reference
Detailed Description	N-Channel 1200 V 54A (Tc) Chassis Mount SOT-227B
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	IXYS
Series	-
Packaging	Tube
Part Status	Obsolete
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	54A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	15V
Rds On (Max) @ Id, Vgs	42mOhm @ 40A, 15V
Vgs(th) (Max) @ Id	3.6V @ 12mA
Gate Charge (Qg) (Max) @ Vgs	107 nC @ 15 V
Vgs (Max)	+15V, -4V
Input Capacitance (Ciss) (Max) @ Vds	3360 pF @ 1000 V
FET Feature	-
Power Dissipation (Max)	-
Operating Temperature	-40°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Chassis Mount
Supplier Device Package	SOT-227B
Package / Case	SOT-227-4, miniBLOC