Name: IPN80R3K3P7ATMA1
Brand: Infineon Technologies
SKU: IPN80R3K3P7ATMA1TR-ND
Price: 0.8804 EUR
Availability: InStock

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IPN80R3K3P7ATMA1
DigiKey Part Number	IPN80R3K3P7ATMA1TR-ND - Tape & Reel (TR) IPN80R3K3P7ATMA1CT-ND - Cut Tape (CT) IPN80R3K3P7ATMA1DKR-ND - Digi-Reel®
Manufacturer	Infineon Technologies
Manufacturer Product Number	IPN80R3K3P7ATMA1
Description	MOSFET N-CH 800V 1.9A SOT223
Manufacturer Standard Lead Time	17 Weeks
Customer Reference
Detailed Description	N-Channel 800 V 1.9A (Tc) 6.1W (Tc) Surface Mount PG-SOT223
Datasheet	Datasheet
EDA/CAD Models	IPN80R3K3P7ATMA1 Models

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	CoolMOS™ P7
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800 V
Current - Continuous Drain (Id) @ 25°C	1.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	3.3Ohm @ 590mA, 10V
Vgs(th) (Max) @ Id	3.5V @ 30µA
Gate Charge (Qg) (Max) @ Vgs	5.8 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	120 pF @ 500 V
FET Feature	-
Power Dissipation (Max)	6.1W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	PG-SOT223
Package / Case	TO-261-4, TO-261AA
Base Product Number	IPN80R3

Unit Price without VAT:	0,71000 €
Unit Price with VAT:	0,88040 €

IPN80R3K3P7ATMA1