TO-261-4, TO-261AA Single FETs, MOSFETs

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of 687

Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
IPN60R2K1CEATMA1 MOSFET N-CH 600V 3.7A SOT223 Infineon Technologies	45.676 In Stock	1 : 0,64000 € Cut Tape (CT) 3.000 : 0,14545 € Tape & Reel (TR)	CoolMOS™ CE	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	3.7A (Tc)	10V	2.1Ohm @ 800mA, 10V	3.5V @ 60µA	6.7 nC @ 10 V	±20V	140 pF @ 100 V	-	5W (Tc)	-40°C ~ 150°C (TJ)	-	-	Surface Mount	PG-SOT223-3	TO-261-4, TO-261AA
IRLL014NTRPBF MOSFET N-CH 55V 2A SOT223 Infineon Technologies	31.843 In Stock	1 : 0,71000 € Cut Tape (CT) 2.500 : 0,16766 € Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	55 V	2A (Ta)	4V, 10V	140mOhm @ 2A, 10V	2V @ 250µA	14 nC @ 10 V	±16V	230 pF @ 25 V	-	1W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-223	TO-261-4, TO-261AA
IPN70R1K4P7SATMA1 MOSFET N-CHANNEL 700V 4A SOT223 Infineon Technologies	11.329 In Stock	1 : 0,72000 € Cut Tape (CT) 3.000 : 0,16637 € Tape & Reel (TR)	CoolMOS™ P7	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	700 V	4A (Tc)	10V	1.4Ohm @ 700mA, 10V	3.5V @ 40µA	4.7 nC @ 10 V	±16V	158 pF @ 400 V	-	6.2W (Tc)	-40°C ~ 150°C (TJ)	-	-	Surface Mount	PG-SOT223	TO-261-4, TO-261AA
DMN3032LE-13 MOSFET N-CH 30V 5.6A SOT223 Diodes Incorporated	38.710 In Stock 755.000 Factory	1 : 0,75000 € Cut Tape (CT) 2.500 : 0,17824 € Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	5.6A (Ta)	4.5V, 10V	29mOhm @ 3.2A, 10V	2V @ 250µA	11.3 nC @ 10 V	±20V	498 pF @ 15 V	-	1.8W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-223-3	TO-261-4, TO-261AA
IRFL4310TRPBF MOSFET N-CH 100V 1.6A SOT223 Infineon Technologies	11.319 In Stock	1 : 0,83000 € Cut Tape (CT) 2.500 : 0,20095 € Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	1.6A (Ta)	10V	200mOhm @ 1.6A, 10V	4V @ 250µA	25 nC @ 10 V	±20V	330 pF @ 25 V	-	1W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-223	TO-261-4, TO-261AA
ZXMP6A17GTA MOSFET P-CH 60V 3A SOT223 Diodes Incorporated	13.299 In Stock	1 : 0,86000 € Cut Tape (CT) 1.000 : 0,23416 € Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	60 V	3A (Ta)	4.5V, 10V	125mOhm @ 2.2A, 10V	1V @ 250µA	17.7 nC @ 10 V	±20V	637 pF @ 30 V	-	2W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-223-3	TO-261-4, TO-261AA
IRLL024NTRPBF MOSFET N-CH 55V 3.1A SOT223 Infineon Technologies	82.149 In Stock	1 : 0,86000 € Cut Tape (CT) 2.500 : 0,21100 € Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	55 V	3.1A (Ta)	4V, 10V	65mOhm @ 3.1A, 10V	2V @ 250µA	15.6 nC @ 5 V	±16V	510 pF @ 25 V	-	1W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-223	TO-261-4, TO-261AA
NDT2955 MOSFET P-CH 60V 2.5A SOT-223-4 onsemi	80.148 In Stock	1 : 0,92000 € Cut Tape (CT) 4.000 : 0,22020 € Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	60 V	2.5A (Ta)	4.5V, 10V	300mOhm @ 2.5A, 10V	4V @ 250µA	15 nC @ 10 V	±20V	601 pF @ 30 V	-	3W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-223-4	TO-261-4, TO-261AA
IRLL2705TRPBF MOSFET N-CH 55V 3.8A SOT223 Infineon Technologies	57.365 In Stock	1 : 0,97000 € Cut Tape (CT) 2.500 : 0,23976 € Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	55 V	3.8A (Ta)	4V, 10V	40mOhm @ 3.8A, 10V	2V @ 250µA	48 nC @ 10 V	±16V	870 pF @ 25 V	-	1W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-223	TO-261-4, TO-261AA
STN4NF03L MOSFET N-CH 30V 6.5A SOT223 STMicroelectronics	5.535 In Stock	1 : 1,00000 € Cut Tape (CT) 4.000 : 0,24451 € Tape & Reel (TR)	STripFET™ II	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	6.5A (Tc)	5V, 10V	50mOhm @ 2A, 10V	1V @ 250µA	9 nC @ 10 V	±16V	330 pF @ 25 V	-	3.3W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-223	TO-261-4, TO-261AA
MCT06P10-TP MOSFET P-CH 100V 6A SOT223 MCC (Micro Commercial Components)	16.117 In Stock	1 : 1,02000 € Cut Tape (CT) 2.500 : 0,26401 € Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	100 V	6A (Tj)	4.5V, 10V	205mOhm @ 6A, 10V	2.8V @ 250µA	25 nC @ 10 V	±20V	760 pF @ 25 V	-	1.25W	150°C (TJ)	-	-	Surface Mount	SOT-223	TO-261-4, TO-261AA
DMP6023LE-13 MOSFET P-CH 60V 7A/18.2A SOT223 Diodes Incorporated	44.416 In Stock	1 : 1,05000 € Cut Tape (CT) 2.500 : 0,26336 € Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	60 V	7A (Ta), 18.2A (Tc)	4.5V, 10V	28mOhm @ 5A, 10V	3V @ 250µA	53.1 nC @ 10 V	±20V	2569 pF @ 30 V	-	2W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-223-3	TO-261-4, TO-261AA
IPN95R3K7P7ATMA1 MOSFET N-CH 950V 2A SOT223 Infineon Technologies	9.281 In Stock	1 : 1,05000 € Cut Tape (CT) 3.000 : 0,25915 € Tape & Reel (TR)	CoolMOS™ P7	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	950 V	2A (Tc)	10V	3.7Ohm @ 800mA, 10V	3.5V @ 40µA	6 nC @ 10 V	±20V	196 pF @ 400 V	-	6W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-SOT223	TO-261-4, TO-261AA
FDT457N MOSFET N-CH 30V 5A SOT223-4 onsemi	14.058 In Stock	1 : 1,06000 € Cut Tape (CT) 4.000 : 0,26157 € Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	5A (Ta)	4.5V, 10V	60mOhm @ 5A, 10V	3V @ 250µA	5.9 nC @ 5 V	±20V	235 pF @ 15 V	-	3W (Ta)	-65°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-223-4	TO-261-4, TO-261AA
NTF6P02T3G MOSFET P-CH 20V 10A SOT223 onsemi	13.117 In Stock 8.000 Factory	1 : 1,08000 € Cut Tape (CT) 4.000 : 0,26524 € Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	10A (Ta)	2.5V, 4.5V	50mOhm @ 6A, 4.5V	1V @ 250µA	20 nC @ 4.5 V	±8V	1200 pF @ 16 V	-	8.3W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-223 (TO-261)	TO-261-4, TO-261AA
BSP250,135 MOSFET P-CH 30V 3A SOT223 Nexperia USA Inc.	5.620 In Stock	1 : 1,10000 € Cut Tape (CT) 4.000 : 0,25592 € Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Not For New Designs	P-Channel	MOSFET (Metal Oxide)	30 V	3A (Tc)	10V	250mOhm @ 1A, 10V	2.8V @ 1mA	25 nC @ 10 V	±20V	250 pF @ 20 V	-	1.65W (Ta)	150°C (TJ)	-	-	Surface Mount	SOT-223	TO-261-4, TO-261AA
IRLL110TRPBF MOSFET N-CH 100V 1.5A SOT223 Vishay Siliconix	9.538 In Stock	1 : 1,14000 € Cut Tape (CT) 2.500 : 0,30085 € Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	1.5A (Tc)	4V, 5V	540mOhm @ 900mA, 5V	2V @ 250µA	6.1 nC @ 5 V	±10V	250 pF @ 25 V	-	2W (Ta), 3.1W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-223	TO-261-4, TO-261AA
FDT439N MOSFET N-CH 30V 6.3A SOT223-4 onsemi	19.728 In Stock	1 : 1,15000 € Cut Tape (CT) 4.000 : 0,28543 € Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	6.3A (Ta)	2.5V, 4.5V	45mOhm @ 6.3A, 4.5V	1V @ 250µA	15 nC @ 4.5 V	±8V	500 pF @ 15 V	-	3W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-223-4	TO-261-4, TO-261AA
CPC5602CTR MOSFET N-CH 350V 5MA SOT-223 IXYS Integrated Circuits Division	71.049 In Stock	1 : 1,17000 € Cut Tape (CT) 1.000 : 0,34494 € Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel, Depletion Mode	MOSFET (Metal Oxide)	350 V	5mA (Ta)	0.35V	14Ohm @ 50mA, 350mV	-	-	±20V	300 pF @ 0 V	-	2.5W (Ta)	-40°C ~ 85°C (TA)	-	-	Surface Mount	SOT-223	TO-261-4, TO-261AA
ZXMN4A06GTA MOSFET N-CH 40V 5A SOT223 Diodes Incorporated	11.584 In Stock	1 : 1,18000 € Cut Tape (CT) 1.000 : 0,33911 € Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	40 V	5A (Ta)	4.5V, 10V	50mOhm @ 4.5A, 10V	1V @ 250µA	18.2 nC @ 10 V	±20V	770 pF @ 40 V	-	2W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-223-3	TO-261-4, TO-261AA
NVF3055L108T1G MOSFET N-CH 60V 3A SOT223 onsemi	12.049 In Stock	1 : 1,28000 € Cut Tape (CT) 1.000 : 0,38392 € Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	3A (Ta)	5V	120mOhm @ 1.5A, 5V	2V @ 250µA	15 nC @ 5 V	±15V	440 pF @ 25 V	-	1.3W (Ta)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	SOT-223 (TO-261)	TO-261-4, TO-261AA
NDT452AP MOSFET P-CH 30V 5A SOT-223-4 onsemi	2.992 In Stock	1 : 1,28000 € Cut Tape (CT) 4.000 : 0,32637 € Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	5A (Ta)	4.5V, 10V	65mOhm @ 5A, 10V	2.8V @ 250µA	30 nC @ 10 V	±20V	690 pF @ 15 V	-	3W (Ta)	-65°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-223-4	TO-261-4, TO-261AA
FDT86113LZ MOSFET N-CH 100V 3.3A SOT223-4 onsemi	2.763 In Stock	1 : 1,28000 € Cut Tape (CT) 4.000 : 0,32436 € Tape & Reel (TR)	PowerTrench®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	3.3A (Tc)	4.5V, 10V	100mOhm @ 3.3A, 10V	2.5V @ 250µA	6.8 nC @ 10 V	±20V	315 pF @ 50 V	-	2.2W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-223-4	TO-261-4, TO-261AA
ZXMP3A16GTA MOSFET P-CH 30V 5.4A SOT223 Diodes Incorporated	16.052 In Stock 1.424.000 Factory	1 : 1,30000 € Cut Tape (CT) 1.000 : 0,37894 € Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	30 V	5.4A (Ta)	4.5V, 10V	45mOhm @ 4.2A, 10V	1V @ 250µA	29.6 nC @ 10 V	±20V	1022 pF @ 15 V	-	2W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-223-3	TO-261-4, TO-261AA
BSP149H6327XTSA1 MOSFET N-CH 200V 660MA SOT223-4 Infineon Technologies	8.752 In Stock	1 : 1,32000 € Cut Tape (CT) 1.000 : 0,38545 € Tape & Reel (TR)	SIPMOS®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel, Depletion Mode	MOSFET (Metal Oxide)	200 V	660mA (Ta)	0V, 10V	1.8Ohm @ 660mA, 10V	1V @ 400µA	14 nC @ 5 V	±20V	430 pF @ 25 V	-	1.8W (Ta)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	PG-SOT223-4	TO-261-4, TO-261AA

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Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

n-channel MOSFETs: where electrons are the primary carriers.
p-channel MOSFETs: where holes are the primary carriers.

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.

Single FET, MOSFETs

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