NVH4L050N170M1 High-Performance Silicon Carbide MOSFET

The onsemi NVH4L050N170M1 is a cutting-edge silicon carbide (SiC) MOSFET designed to deliver exceptional performance in high-voltage and fast-switching applications. With a blocking voltage of 1,700 V and a low R_DS(ON) of 53 mΩ, this MOSFET is ideal for demanding environments where efficiency and reliability are paramount. The NVH4L050N170M1 features planar technology, which ensures reliable operation with negative gate voltage drive and turn-off spikes on the gate. It performs optimally with a 20 V gate drive but is also compatible with an 18 V gate drive. This MOSFET is 100% avalanche tested and RoHS compliant, making it a robust and environmentally friendly choice for various applications. Whether used in automotive onboard chargers or DC/DC converters for electric and hybrid vehicles, the NVH4L050N170M1 offers superior performance and durability.