Single FETs, MOSFETs

Results: 14
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
LFUSCD20120B
LSIC1MO170E0750
SICFET N-CH 1700V 750OHM TO247-3
Littelfuse Inc.
391
In Stock
1 : 7,12000 €
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
6.2A (Tc)
20V
1Ohm @ 2A, 20V
4V @ 1mA
13 nC @ 20 V
+22V, -6V
200 pF @ 1000 V
-
60W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247AD
TO-247-3
LFUSCD20120B
LSIC1MO120E0080
SICFET N-CH 1200V 39A TO247-3
Littelfuse Inc.
369
In Stock
1 : 16,25000 €
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
39A (Tc)
20V
100mOhm @ 20A, 20V
4V @ 10mA
95 nC @ 20 V
+22V, -6V
1825 pF @ 800 V
-
179W (Tc)
-55°C ~ 150°C
-
-
Through Hole
TO-247AD
TO-247-3
LFUSCD20120B
LSIC1MO120E0160
SICFET N-CH 1200V 22A TO247-3
Littelfuse Inc.
2.227
In Stock
1.800
Factory
1 : 10,71000 €
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
22A (Tc)
20V
200mOhm @ 10A, 20V
4V @ 5mA
57 nC @ 20 V
+22V, -6V
870 pF @ 800 V
-
125W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247AD
TO-247-3
LSIC1MO170TO750_TO-263-7L_1
LSIC1MO170T0750
SICFET N-CH 1700V 6.4A TO263-7L
Littelfuse Inc.
873
In Stock
1 : 8,39000 €
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
6.4A (Tc)
20V
1Ohm @ 2A, 20V
4V @ 1mA
11 nC @ 20 V
+22V, -6V
200 pF @ 1000 V
-
65W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263-7L
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
LSIC1MO120G0160
LSIC1MO120G0040
MOSFET SIC 1200V 50A TO247-4L
Littelfuse Inc.
0
In Stock
Check Lead Time
1 : 24,20000 €
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
70A (Tc)
20V
50mOhm @ 40A, 20V
4V @ 20mA
175 nC @ 20 V
+22V, -6V
317 pF @ 800 V
-
357W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
LFUSCD20120B
LSIC1MO170E1000
SICFET N-CH 1700V 5A TO247-3L
Littelfuse Inc.
0
In Stock
450 : 3,04304 €
Tube
-
Tube
Obsolete
N-Channel
SiCFET (Silicon Carbide)
1700 V
5A (Tc)
15V, 20V
1Ohm @ 2A, 20V
4V @ 1mA
15 nC @ 20 V
+22V, -6V
200 pF @ 1000 V
-
54W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247AD
TO-247-3
LFUSCD20120B
LSIC1MO120E0120
SICFET N-CH 1200V 27A TO247-3
Littelfuse Inc.
0
In Stock
Active
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
27A (Tc)
20V
150mOhm @ 14A, 20V
4V @ 7mA
80 nC @ 20 V
+22V, -6V
1125 pF @ 800 V
-
139W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247AD
TO-247-3
LSIC1MO120G0160
LSIC1MO120G0120
MOSFET SIC 1200V 18A TO247-4L
Littelfuse Inc.
0
In Stock
Active
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
27A (Tc)
20V
150mOhm @ 14A, 20V
4V @ 7mA
63 nC @ 20 V
+22V, -6V
1130 pF @ 800 V
-
156W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
LSIC1MO120G0160
LSIC1MO120G0025
MOSFET SIC 1200V 70A TO247-4L
Littelfuse Inc.
0
In Stock
Active
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
100A (Tc)
20V
32mOhm @ 50A, 20V
4V @ 30mA
265 nC @ 20 V
+22V, -6V
495 pF @ 800 V
-
500W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
LSIC1MO120G0160
LSIC1MO120G0080
MOSFET SIC 1200V 25A TO247-4L
Littelfuse Inc.
0
In Stock
Active
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
39A (Tc)
20V
100mOhm @ 20A, 20V
4V @ 10mA
92 nC @ 20 V
+22V, -6V
170 pF @ 800 V
-
214W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
LSIC1MO120G0160
LSIC1MO120G0160
MOSFET SIC 1200V 14A TO247-4L
Littelfuse Inc.
0
In Stock
Active
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
22A (Tc)
20V
200mOhm @ 10A, 20V
4V @ 5mA
50 nC @ 20 V
+22V, -6V
890 pF @ 800 V
-
125W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
TO-263-7
LSIC1MO120T0120-TU
1200V/120MOHM SIC MOSFET TO-263-
IXYS
0
In Stock
Active
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
27A (Tc)
-
-
-
-
-
-
-
-
-
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-263-7
LSIC1MO120T0160-TU
1200V/160MOHM SIC MOSFET TO-263-
IXYS
0
In Stock
Active
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
22A (Tc)
-
-
-
-
-
-
-
-
-
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-263-7
LSIC1MO120T0080-TU
1200V/80MOHM SIC MOSFET TO-263-7
IXYS
0
In Stock
Active
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
39A (Tc)
-
-
-
-
-
-
-
-
-
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Showing
of 14

Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

  • Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
  • Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

  1. High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
  2. Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
  3. High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.