ROHM 4-pin SiC Power MOSFETs | DigiKey Daily

ROHM presents their silicon carbide power MOSFETs. Unlike IGBTs, these devices have no tail current during turn-off, resulting in faster operation and reduced switching loss. Also, unlike silicon devices, the On resistance remains relatively constant even at high temperatures, minimizing conduction losses. ROHM’s 3rd generation trench-based SiC MOSFETs feature a fourth lead, separating power source and driver source pins. This eliminates parasitic source inductance in the gate drive loop and allows for faster switching speed, resulting in up to 35% lower losses than conventional 3-pin package alternatives. ROHM’s 4-pin SiC MOSFETs are offered in 650V and 1200V variants and are ideal for server power supplies, solar power inverters, and EV charging stations.