Name: TPN6R303NC,LQ
Brand: Toshiba Semiconductor and Storage
SKU: TPN6R303NCLQTR-ND
Price: 1.7856 EUR
Availability: InStock

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TPN6R303NC,LQ
DigiKey Part Number	TPN6R303NCLQTR-ND - Tape & Reel (TR) TPN6R303NCLQCT-ND - Cut Tape (CT) TPN6R303NCLQDKR-ND - Digi-Reel®
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	TPN6R303NC,LQ
Description	MOSFET N CH 30V 20A 8TSON-ADV
Manufacturer Standard Lead Time	16 Weeks
Customer Reference
Detailed Description	N-Channel 30 V 20A (Ta) 700mW (Ta), 19W (Tc) Surface Mount 8-TSON Advance (3.1x3.1)
Datasheet	Datasheet
EDA/CAD Models	TPN6R303NC,LQ Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 2.3V @ 200µA
Mfr Toshiba Semiconductor and Storage	Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V
Series U-MOSVIII	Vgs (Max) ±20V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Input Capacitance (Ciss) (Max) @ Vds 1370 pF @ 15 V
Part Status Active	Power Dissipation (Max) 700mW (Ta), 19W (Tc)
FET Type N-Channel	Operating Temperature 150°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Surface Mount
Drain to Source Voltage (Vdss) 30 V	Supplier Device Package 8-TSON Advance (3.1x3.1)
Current - Continuous Drain (Id) @ 25°C 20A (Ta)	Package / Case 8-PowerVDFN
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V	Base Product Number TPN6R303
Rds On (Max) @ Id, Vgs 6.3mOhm @ 10A, 10V

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