Name: TK9A65W,S5X
Brand: Toshiba Semiconductor and Storage
SKU: TK9A65WS5X-ND
Price: 3.038 EUR
Availability: OutOfStock

TK9A65W,S5X is out of stock and can be placed on backorder.

Available Substitutes:

Similar

Infineon Technologies

In Stock: 0

Unit Price: 1,57000 €

Similar

Rochester Electronics, LLC

In Stock: 10.825

Unit Price: 0,84924 €

Similar

STMicroelectronics

In Stock: 354

Unit Price: 3,38000 €

Similar

STMicroelectronics

In Stock: 417

Unit Price: 2,04000 €

Similar

STMicroelectronics

In Stock: 963

Unit Price: 1,48000 €

Similar

STMicroelectronics

In Stock: 0

Unit Price: 4,39000 €

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

TK9A65W,S5X
DigiKey Part Number	TK9A65WS5X-ND
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	TK9A65W,S5X
Description	MOSFET N-CH 650V 9.3A TO220SIS
Manufacturer Standard Lead Time	16 Weeks
Customer Reference
Detailed Description	N-Channel 650 V 9.3A (Ta) 30W (Tc) Through Hole TO-220SIS
Datasheet	Datasheet
EDA/CAD Models	TK9A65W,S5X Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Toshiba Semiconductor and Storage
Series	DTMOSIV
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	9.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	500mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id	3.5V @ 350µA
Gate Charge (Qg) (Max) @ Vgs	20 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	700 pF @ 300 V
FET Feature	-
Power Dissipation (Max)	30W (Tc)
Operating Temperature	150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-220SIS
Package / Case	TO-220-3 Full Pack
Base Product Number	TK9A65