N-Channel 650 V 24A (Ta) 190W (Tc) Through Hole TO-220
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TK110E65Z,S1X

DigiKey Part Number
264-TK110E65ZS1X-ND
Manufacturer
Toshiba Semiconductor and Storage
Manufacturer Product Number
TK110E65Z,S1X
Description
650V DTMOS VI TO-220 110MOHM
Manufacturer Standard Lead Time
16 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 24A (Ta) 190W (Tc) Through Hole TO-220
Datasheet
 Datasheet
Product Attributes
Type
Description
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Category
Mfr
Toshiba Semiconductor and Storage
Series
-
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
24A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
110mOhm @ 12A, 10V
Vgs(th) (Max) @ Id
4V @ 1.02mA
Gate Charge (Qg) (Max) @ Vgs
40 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
2250 pF @ 300 V
FET Feature
-
Power Dissipation (Max)
190W (Tc)
Operating Temperature
150°C
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3
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In-Stock: 50
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Quantity
All prices are in EUR
Tube
QuantityUnit PriceExt Price
15,65000 €5,65 €
502,99340 €149,67 €
1002,73640 €273,64 €
5002,28648 €1.143,24 €
1.0002,14208 €2.142,08 €
2.0002,07512 €4.150,24 €
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:5,65000 €
Unit Price with VAT:7,00600 €