



Type | Description | Select All |
|---|---|---|
Category | ||
Manufacturer | onsemi | |
Series | - | |
Packaging | Tray | |
Part Status | Active | |
Technology | Silicon Carbide (SiC) | |
Configuration | 2 N-Channel (Dual) Common Source | |
FET Feature | - | |
Drain to Source Voltage (Vdss) | 900V | |
Current - Continuous Drain (Id) @ 25°C | 154A (Tc) | |
Rds On (Max) @ Id, Vgs | 14mOhm @ 100A, 15V | |
Vgs(th) (Max) @ Id | 4.3V @ 40mA | |
Gate Charge (Qg) (Max) @ Vgs | 546.4nC @ 15V | |
Input Capacitance (Ciss) (Max) @ Vds | 7007pF @ 450V | |
Power - Max | 328W (Tj) | |
Operating Temperature | -40°C ~ 150°C (TJ) | |
Mounting Type | Chassis Mount | |
Package / Case | Module | |
Supplier Device Package | - | |
Base Product Number |
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1 | 94,84000 € | 94,84 € |
| 28 | 79,96893 € | 2.239,13 € |
| Unit Price without VAT: | 94,84000 € |
|---|---|
| Unit Price with VAT: | 117,60160 € |

