Name: NTH4L028N170M1
Brand: onsemi
SKU: 5556-NTH4L028N170M1-ND
Price: 39.37 EUR
Availability: InStock

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NTH4L028N170M1
cms-digikey-product-number	5556-NTH4L028N170M1-ND
cms-manufacturer	onsemi
cms-manufacturer-product-number	NTH4L028N170M1
cms-description	SIC MOSFET 1700 V 28 MOHM M1 SER
cms-standard-lead-time	18 Weeks
cms-customer-reference
cms-detailed-description	N-Channel 1700 V 81A (Tc) 535W (Tc) Through Hole TO-247-4L
cms-datasheet	cms-datasheet

cms-product-attributes

cms-type	cms-description	cms-select-all
cms-category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	onsemi
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1700 V
Current - Continuous Drain (Id) @ 25°C	81A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	20V
Rds On (Max) @ Id, Vgs	40mOhm @ 60A, 20V
Vgs(th) (Max) @ Id	4.3V @ 20mA
Gate Charge (Qg) (Max) @ Vgs	200 nC @ 20 V
Vgs (Max)	+25V, -15V
Input Capacitance (Ciss) (Max) @ Vds	4230 pF @ 800 V
FET Feature	-
Power Dissipation (Max)	535W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-247-4L
Package / Case	TO-247-4
Base Product Number	NTH4L02