Name: GS66508BMRXUSA1
Brand: Infineon Technologies
SKU: 448-GS66508BMRXUSA1TR-ND
Price: 22.0968 EUR
Availability: OutOfStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

GS66508BMRXUSA1
DigiKey Part Number	448-GS66508BMRXUSA1TR-ND - Tape & Reel (TR) 448-GS66508BMRXUSA1CT-ND - Cut Tape (CT) 448-GS66508BMRXUSA1DKR-ND - Digi-Reel®
Manufacturer	Infineon Technologies
Manufacturer Product Number	GS66508BMRXUSA1
Description	GS66508B-MR
Customer Reference
Detailed Description	N-Channel 650 V 30A (Tc) Surface Mount Die

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	-
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Last Time Buy
FET Type	N-Channel
Technology	GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V
Rds On (Max) @ Id, Vgs	63mOhm @ 9A, 6V
Vgs(th) (Max) @ Id	2.6V @ 7mA
Gate Charge (Qg) (Max) @ Vgs	6.1 nC @ 6 V
Vgs (Max)	+7V, -10V
Input Capacitance (Ciss) (Max) @ Vds	242 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	-
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	Die
Package / Case	Die