BSZ120P03NS3EGATMA1 Infineon Technologies | Single FETs, MOSFETs

BSZ120P03NS3EGATMA1 is Obsolete and no longer manufactured.

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Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

BSZ120P03NS3EGATMA1
DigiKey Part Number	BSZ120P03NS3EGATMA1TR-ND - Tape & Reel (TR)
Manufacturer	Infineon Technologies
Manufacturer Product Number	BSZ120P03NS3EGATMA1
Description	MOSFET P-CH 30V 11A/40A 8TSDSON
Customer Reference
Detailed Description	P-Channel 30 V 11A (Ta), 40A (Tc) 2.1W (Ta), 52W (Tc) Surface Mount PG-TSDSON-8
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	OptiMOS™
Packaging	Tape & Reel (TR)
Part Status	Obsolete
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	11A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	12mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	3.1V @ 73µA
Gate Charge (Qg) (Max) @ Vgs	45 nC @ 10 V
Vgs (Max)	±25V
Input Capacitance (Ciss) (Max) @ Vds	3360 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	2.1W (Ta), 52W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	PG-TSDSON-8
Package / Case	8-PowerTDFN