Name: G2K2P10D3E
Brand: Goford Semiconductor
SKU: 4822-G2K2P10D3ETR-ND
Price: 0.15423 EUR
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

G2K2P10D3E
DigiKey Part Number	4822-G2K2P10D3ETR-ND - Tape & Reel (TR)
Manufacturer	Goford Semiconductor
Manufacturer Product Number	G2K2P10D3E
Description	MOSFET P-CH ESD 100V 10A DFN3*3-
Customer Reference
Detailed Description	P-Channel 100 V 10A (Tc) 31W (Tc) Surface Mount 8-DFN (3.15x3.05)
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Goford Semiconductor
Series	-
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	210mOhm @ -6A, -10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	33 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1668 pF @ -50 V
Power Dissipation (Max)	31W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-DFN (3.15x3.05)
Package / Case	8-PowerVDFN