Wise-Integration

WiseGan™ WI62195

Wise-Integration 650 V enhancement mode (E-mode) half-bridge power GaN ICs offer 195 mΩ in a DFN 6 mm x 8 mm footprint

Image of Wise-Integration WiseGan WI62195Wise-Integration WI62195 is an enhancement mode GaN-on-silicon half-bridge power circuit of the WiseGan power integrated circuits. The properties of GaN allow for high current, high voltage breakdown, and high switching frequency.

Features
  • 650 V enhancement mode half-bridge
  • Bottom side-cooled configuration
  • RDS(ON): 195 mΩ per switch
  • IDS(max): 9 A
  • Low-inductance PDFN package
 
  • Easy gate drive requirements: 0 V to 6 V
  • Transient-tolerant gate drive up to 7 V
  • High switching frequency: >1 MHz
  • Zero reverse recovery loss
  • Small 6 mm x 8 mm PCB footprint
Applications
  • High-efficiency power conversion
  • High-density power conversion
  • AC/DC, DC/DC, and DC/AC
  • Bridgeless totem pole PFC
  • ACF (active clamp flyback)
  • QRF (quasi-resonant flyback)
 
  • LLC resonant converters
  • Half-bridge topologies
  • Synchronous buck or boost
  • Small to medium UPS
  • Fast battery charging

WiseGan™ WI62195

ImageManufacturer Part NumberDescriptionTechnologyConfigurationAvailable QuantityPriceView Details
MOSFET 2N-CH 750V 9A 14PQFNWI62195MOSFET 2N-CH 750V 9A 14PQFNGaNFET (Gallium Nitride)2 N-Channel (Half Bridge)0 - Immediate$2.57View Details
Published: 2025-02-14