WiseGan™ WI61195

Wise-Integration 700 V enhancement mode (E-mode) GaN power ICs offer 195 mΩ in a DFN 8x8 footprint

Image of Wise-Integration WiseGan WI61195Wise-Integration WI61195 is an enhancement mode GaN-on-silicon discrete power transistor of the WiseGan portfolio. The properties of GaN allow for high current, high voltage breakdown, and high switching frequency.

Features
  • 700 V enhancement mode transistor
  • Bottom-side-cooled configuration
  • RDS(ON): 195 mΩ
  • IDS (max): 8 A
  • Low-inductance PDFN package
 
  • Easy gate drive requirements: 0 V to 6 V
  • Transient-tolerant gate drive up to 7 V
  • High switching frequency: >1 MHz
  • Zero reverse recovery loss
  • Small 8 x 8 mm PCB footprint
Applications
  • High-efficiency power conversion
  • High-density power conversion
  • AC/DC, DC/DC, and DC/AC
  • Bridgeless totem pole PFC
  • ACF (active clamp flyback)
  • QRF (quasi-resonant flyback)
 
  • LLC resonant converters
  • Half-bridge topologies
  • Synchronous buck or boost
  • Small to medium UPS
  • Fast battery charging

WiseGan™ WI61195

ImageManufacturer Part NumberDescriptionAvailable QuantityPriceView Details
POWER GAN IC  8X8 PDFNWI61195TRPOWER GAN IC 8X8 PDFN2481 - Immediate$4.58View Details
Published: 2025-02-14