TAV2-14LN+ Datasheet

$6
Ultra Low Noise, Medium Current
E -PH EM T Tr a n s i s to r
Page 1 of 5
Notes
A.
Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document.
B.
Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions.
C.
The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled
to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp
Mini-Circuits
®
www.minicircuits.com
P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com
The Big Deal
• Low Noise Figure, 0.6 dB typ. at 6 GHz, 2V
• High Gain, 16.4 dB typ. at 6 GHz, 4V
• High OIP3, +30.9 dBm typ. at 6 GHz, 4V
• High P1dB, 18.8 dBm typ. at 6 GHz, 4V
Product Overview
Mini-Circuits’ TAV2-14LN+ is a MMIC E-PHEMT* transistor with an operating frequency range from 0.05 to
10 GHz. This model combines high gain with extremely low noise figure, resulting in lower overall system
noise. Low NF and IP3 performance make it an ideal choice for sensitive receivers in communications sys-
tems. Manufactured using highly repeatable E-PHEMT technology, the unit comes housed in a tiny 2x2mm
MCLP package. This model requires external biasing and matching.
Key Features
Feature Advantages
Wideband, 0.05 to 10 GHz
Usable to 12 GHz
A single device covers many wireless communications bands including cellular, ISM,
GSM, WCDMA, WiMax, WLAN, 5G and more.
High IP3 vs. DC power consumption
• +30.9 dBm at 6 GHz, 4V
• +33.2 dBm at 12 GHz, 4V
The TAV2-14LN+ matches industry leading IP3 performance relative to device size
and power consumption. Enhanced linearity over a broad frequency range makes the
device ideal for use in:
• Driver amplifiers for complex waveform up converter paths
• Drivers in linearized transmit systems
Combines high gain (16.4 dB) with very
low Noise Figure (0.7 dB)
The unique combination of high gain and low Noise Figure results in lower overall
system noise.
2 x 2mm 6-lead MCLP package Tiny footprint saves space in dense layouts while providing low inductance, repeatable
transitions, and excellent thermal contact to the PCB.
50Ω 0.05 to 10 GHz
* Enhancement mode Pseudomorphic High Electron Mobility Transistor.
TAV2-14LN +
2mm x 2mm
mMini-Circuits $6
Ultra Low Noise, Medium Current
E -PH EM T Tr a n s i s to r
Page 2 of 5
Notes
A.
Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document.
B.
Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions.
C.
The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled
to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp
Mini-Circuits
®
www.minicircuits.com
P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com
REV. OR
ECO-001966
TAV2-14LN+
GY/RS/CP
200227
Product Features
• Low Noise Figure, 0.6 dB typ. at 6 GHz, 2V,
• Gain, 16.4 dB typ. at 6 GHz, 4V
• High Output IP3, +30.9 dBm at 6 GHz, 4V
• Output Power at 1dB comp., +18.8 dBm at 6 GHz, 4V
• External biasing and matching required
• Usable to 12 GHz
Typical Applications
• 5G
• Cellular
• ISM
• GSM
• WCDMA
• WiMax
• WLAN
• UNII and HIPERLAN
Function Pin Number Description
RF-IN 2 Gate used for RF input
RF-OUT 5 Drain used for RF output
GND 1,3,4,6 & Paddle Source terminal, normally connected to ground.
General Description
Mini-Circuits’ TAV2-14LN+ is a MMIC E-PHEMT* transistor with an operating frequency range from 0.05 to
10 GHz. This model combines high gain with extremely low noise figure, resulting in lower overall system
noise. Low NF and IP3 performance make it an ideal choice for sensitive receivers in communications sys-
tems. Manufactured using highly repeatable E-PHEMT technology, the unit comes housed in a tiny 2x2mm
MCLP package. This model requires external biasing and matching.
simplified schematic and pin description
DRAIN
GATE
SOURCE
50Ω 0.05 to 10 GHz
TAV2-14LN +
CASE STYLE: MC1630-1
+RoHS Compliant
The +Suffix identifies RoHS Compliance. See our web site
for RoHS Compliance methodologies and qualifications
Generic photo used for illustration purposes only
mMini-Circuits
E-PHEMT Transistor TAV2-14LN +
Page 3 of 5
Notes
A.
Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document.
B.
Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions.
C.
The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled
to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp
Mini-Circuits
®
www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com
Electrical Specifications at TAMB=25°C
Symbol Parameter Condition Min. Typ. Max. Units
DC Specifications
VTH Threshold Voltage VDS=4V, IDS=4 mA 0.37 V
IDSS Saturated Drain Current VDS=4V, VGS=0 V — 2.0 — µA
GMTransconductance
VDS =4V, Gm =∆IDS/∆VGS,
∆VGS = VGS2-VGS1,
VGS2=0.7V, VGS1=0.6V
∆IDS =(IDS at VGS2)-(IDS at VGS1)
— 192 — mS
IGSS Gate leakage Current VGD=VGS=-3V — 1.0 µA
Parameter Condition (GHz)
VDS = 4V1,
IDS = 40mA
VDS = 2V1
IDS = 20mA VS = 5V2VS = 3V2
Units
Min. Typ. Max. Typ. Ty p. Typ.
Gain
0.05 21 23.4 25.7 22 — —
dB
6 14.7 16.4 18 15.9 12.7 11.9
8 12.5 13.9 15.3 13.3 10.1 9.4
10 10.8 11.8 13.2 11.3 9.8 9.1
12 — 10.2 — 10 — —
Input Return Loss
0.05 — — — — — —
dB
6 7 6 11 10
8 7 6 15 12
10 7 7 8 7
12 8 7 — —
Output Return Loss
0.05 5 5 — —
dB
6 13 13 7 7
8 20 17 8 9
10 20 17 7 7
12 19 16 — —
P1dB3
0.05 17.7 13.3 — —
dBm
6 18.8 13.1 12.6 8.5
8 19.1 13.4 11.2 7.4
10 19.4 13.5 13.4 10.2
12 19.1 13 — —
OIP3
Pout=5dBm/Tone
0.05 27.1 22.8 — —
dBm
6 30.9 24.9 25.9 20.8
8 31.6 25.9 25.4 18.6
10 33.0 28.5 27.0 21.8
12 33.2 29.0 — —
Noise Figure
0.05 2.5 0.7 — —
dB
6 0.7 0.6 0.8 0.7
8 0.7 0.6 1.0 0.8
10 0.8 0.7 1.0 0.7
12 1.0 0.8 — —
IDS DC 40 20 54 23 mA
VGS DC 0.44 0.65 0.72 0.58 — — V
1. Measured in test board TB-TAV2-14LN+. See Fig 1.
2. Measured in eval board TB-TAV2-14LNE+ (designed for 6-10 GHz). See Fig. 2.
3. Drain current bias allowed to increase during compression measurement.
RF & DC Specifications, Z0=50 Ohms
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E-PHEMT Transistor TAV2-14LN +
Page 4 of 5
Notes
A.
Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document.
B.
Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions.
C.
The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled
to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp
Mini-Circuits
®
www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com
Absolute Maximum Ratings4
Symbol Parameter Max. Units
VDS
5Drain-Source Voltage 5 V
VGS
5Gate-Source Voltage at VDS=4V -5 &1 V
IDS
5Drain Current at VDS=4V 65 mA
IGS Gate Current 15 µA
PDISS Total Dissipated Power 325 mW
PIN
6RF Input Power
18 (5-minute max.)
15 (continuous)
dBm
TCH Channel Temperature 150 °C
TOP Operating Temperature -40 to 85 °C
TSTD Storage Temperature -65 to 150 °C
θjc Thermal Resistance 170 °C/W
Fig 1. Block Diagram of Test Circuit used for characterization. (DUT is soldered on Mini-Circuits Test Board TB-TAV2-14LN+)
Gain, Output power at 1dB compression (P1dB), Noise Figure and output IP3 (OIP3) are measured using Agilent’s Microwave Network
Analyzer N5242A PNA-X.
Conditions:
1. Drain voltage (with reference to source, VDS)= 2V&4V as shown.
2. Gate Voltage (with reference to source, VGS) is set to obtain desired Drain-Source current (IDS) as shown in graphs or specification table.
3. Gain: Pin= -25dBm
4. Output IP3 (OIP3): Two tones, spaced 1 MHz apart, 5 dBm/tone at output.
5. No external matching components used.
Characterization Test Circuit
Fig 2. Block Diagram of Test Circuit used for characterization. (DUT is soldered on Mini-Circuits Application test board
TB-TAV2-14LNE+
)
Gain, Return loss, Output power at1dB compression (P1dB), output IP3 (OIP3) and noise figure measured using Agilent’s
microwave network analyzer N5242A PNA-X.
Conditions:
1. Supply voltage, VS=3V&5V
2. Gain and Return loss: Pin= -25dBm
3. Output IP3 (OIP3): Two Tones spaced 1 MHz apart, 5dBm/ tone at output.
4. Operation of this device above any one of these parameters may cause permanent damage.
5. Assumes DC quiescent conditions.
6. IGS is limited to 15µA during test.
Application Test Circuit
mMini-Circuits
E-PHEMT Transistor TAV2-14LN +
Page 5 of 5
Notes
A.
Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document.
B.
Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions.
C.
The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled
to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp
Mini-Circuits
®
www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com
ESD Rating
Human Body Model (HBM): Class 0 (50V to 250V) in accordance with ANSI/ESD STM 5.1 - 2001
MSL Test Flow Chart
Additional Notes
A. Performance and quality attributes and conditions not expressly stated in this specification document are intended
to be excluded and do not form a part of this specification document.
B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s
applicable established test performance criteria and measurement instructions.
C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms
and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits
contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder,
please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp
Visual
Inspection Electrical Test SAM Analysis
Reflow 3 cycles,
260°C
Soak
85°C/85RH
168 hours
Bake at 125°C,
24 hours
Visual
Inspection Electrical Test SAM Analysis
Start
Finish
Performance Data
Data Table
Swept Graphs
S-Parameter (S2P Files) Data Set (.zip file)
Case Style MC1630-1 Plastic package, exposed paddle, lead finish: Matte-Tin
Tape & Reel F55
Standard quantities available on reel
7” reels with 20, 50, 100, 200, 500 or 1K devices
Suggested Layout for PCB Design PL-659
Evaluation Board TB-TAV2-14LN+ & TB-TAV2-14LNE+
Environmental Ratings ENV08T1
Additional Detailed Technical Information
additional information is available on our dash board. To access this information
click here
Product Marking
MCL
T214
Marking may contain other features or characters for internal lot control