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SI7850DP-T1-GE3 N-Channel 60V 6.2A (Ta) 1.8W (Ta) Surface Mount PowerPAK® SO-8
Price & Procurement
14.475 In Stock
Can ship immediately
 

Quantity
All prices are in EUR.
Price Break Unit Price Extended Price
1 1,39000 1,39 €
10 1,25100 12,51 €
25 1,18040 29,51 €
100 0,92090 92,09 €
250 0,89732 224,33 €
500 0,77926 389,63 €
1.000 0,66118 661,18 €

Submit a request for quotation on quantities greater than those displayed.

Alternate Package
  • Tape & Reel (TR)  : SI7850DP-T1-GE3TR-ND
  • Minimum Quantity: 3.000
  • Quantity Available: 12.000 - Immediate
  • Unit Price: 0,65174 €
  • Digi-Reel®  : SI7850DP-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 14.475 - Immediate
  • Unit Price: Digi-Reel®

SI7850DP-T1-GE3

Datasheet
Digi-Key Part Number SI7850DP-T1-GE3CT-ND
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Manufacturer

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Manufacturer Part Number SI7850DP-T1-GE3
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Description MOSFET N-CH 60V 6.2A PPAK SO-8
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Manufacturer Standard Lead Time 14 Weeks
Detailed Description

N-Channel 60V 6.2A (Ta) 1.8W (Ta) Surface Mount PowerPAK® SO-8

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Documents & Media
Datasheets SI7850DP
Video File MOSFET Technologies for Power Conversion
HTML Datasheet SI7850DP
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 6.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 22mOhm @ 10.3A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 1.8W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Part Number SI7850
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI7850DP-T1-GE3CT