N-Channel, Depletion Mode Single FETs, MOSFETs

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
MCP101T-315I/TT
MOSFET N-CH 500V 13MA SOT23-3
Microchip Technology
39.566
In Stock
1 : 0,43000 €
Cut Tape (CT)
3.000 : 0,31957 €
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel, Depletion Mode
MOSFET (Metal Oxide)
500 V
13mA (Tj)
0V
1000Ohm @ 500µA, 0V
-
-
±20V
10 pF @ 25 V
-
360mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
PG-SOT23
MOSFET N-CH 100V 170MA SOT23-3
Infineon Technologies
102.026
In Stock
1 : 0,50000 €
Cut Tape (CT)
3.000 : 0,11067 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel, Depletion Mode
MOSFET (Metal Oxide)
100 V
170mA (Ta)
0V, 10V
6Ohm @ 170mA, 10V
1.8V @ 50µA
2.8 nC @ 7 V
±20V
68 pF @ 25 V
-
360mW (Ta)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
PG-SOT23
TO-236-3, SC-59, SOT-23-3
PG-SOT23
MOSFET N-CH 600V 21MA SOT23-3
Infineon Technologies
40.869
In Stock
1 : 0,54000 €
Cut Tape (CT)
3.000 : 0,11819 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel, Depletion Mode
MOSFET (Metal Oxide)
600 V
21mA (Ta)
0V, 10V
500Ohm @ 16mA, 10V
2.7V @ 8µA
2.1 nC @ 5 V
±20V
28 pF @ 25 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
PG-SOT23
TO-236-3, SC-59, SOT-23-3
MCP101T-315I/TT
MOSFET N-CH 350V 72MA SOT23-3
Microchip Technology
21.392
In Stock
1 : 0,60000 €
Cut Tape (CT)
3.000 : 0,45776 €
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel, Depletion Mode
MOSFET (Metal Oxide)
350 V
72mA (Tj)
0V
35Ohm @ 150mA, 0V
-
-
±20V
120 pF @ 25 V
-
360mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
C04-029 MB
MOSFET N-CH 500V 30MA SOT89-3
Microchip Technology
16.006
In Stock
1 : 0,68000 €
Cut Tape (CT)
2.000 : 0,51822 €
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel, Depletion Mode
MOSFET (Metal Oxide)
500 V
30mA (Tj)
0V
1000Ohm @ 500µA, 0V
-
-
±20V
10 pF @ 25 V
-
1.6W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-89-3
TO-243AA
DN2450K4-G
MOSFET N-CH 500V 350MA TO252
Microchip Technology
2.511
In Stock
1 : 0,72000 €
Cut Tape (CT)
2.000 : 0,54413 €
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel, Depletion Mode
MOSFET (Metal Oxide)
500 V
350mA (Tj)
0V
10Ohm @ 300mA, 0V
-
-
±20V
200 pF @ 25 V
-
2.5W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
C04-029 MB
MOSFET N-CH 250V 360MA TO243AA
Microchip Technology
7.530
In Stock
1 : 0,76000 €
Cut Tape (CT)
2.000 : 0,56141 €
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel, Depletion Mode
MOSFET (Metal Oxide)
250 V
360mA (Tj)
0V
6Ohm @ 200mA, 0V
-
-
±20V
350 pF @ 25 V
-
1.6W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-243AA (SOT-89)
TO-243AA
C04-029 MB
MOSFET N-CH 350V 230MA TO243AA
Microchip Technology
7.743
In Stock
1 : 0,78000 €
Cut Tape (CT)
2.000 : 0,59596 €
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel, Depletion Mode
MOSFET (Metal Oxide)
350 V
230mA (Tj)
0V
10Ohm @ 150mA, 0V
-
-
±20V
360 pF @ 25 V
-
1.6W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-243AA (SOT-89)
TO-243AA
C04-029 MB
MOSFET N-CH 450V 200MA TO243AA
Microchip Technology
14.591
In Stock
1 : 0,86000 €
Cut Tape (CT)
2.000 : 0,64778 €
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel, Depletion Mode
MOSFET (Metal Oxide)
450 V
200mA (Ta)
0V
20Ohm @ 150mA, 0V
-
-
±20V
360 pF @ 25 V
-
1.6W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-243AA (SOT-89)
TO-243AA
C04-029 MB
MOSFET N-CH 400V 170MA TO243AA
Microchip Technology
7.116
In Stock
1 : 0,92000 €
Cut Tape (CT)
2.000 : 0,69097 €
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel, Depletion Mode
MOSFET (Metal Oxide)
400 V
170mA (Tj)
0V
25Ohm @ 120mA, 0V
-
-
±20V
300 pF @ 25 V
-
1.6W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-243AA (SOT-89)
TO-243AA
71.049
In Stock
1 : 1,17000 €
Cut Tape (CT)
1.000 : 0,34494 €
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel, Depletion Mode
MOSFET (Metal Oxide)
350 V
5mA (Ta)
0.35V
14Ohm @ 50mA, 350mV
-
-
±20V
300 pF @ 0 V
-
2.5W (Ta)
-40°C ~ 85°C (TA)
-
-
Surface Mount
SOT-223
TO-261-4, TO-261AA
CPC3703CTR
MOSFET N-CH 250V 360MA SOT89-3
IXYS Integrated Circuits Division
3.034
In Stock
1 : 1,17000 €
Cut Tape (CT)
1.000 : 0,34866 €
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel, Depletion Mode
MOSFET (Metal Oxide)
250 V
360mA (Ta)
0V
4Ohm @ 200mA, 0V
-
-
±15V
350 pF @ 25 V
-
1.1W (Ta)
-55°C ~ 125°C (TA)
-
-
Surface Mount
SOT-89-3
TO-243AA
PG-SOT223-4
MOSFET N-CH 200V 660MA SOT223-4
Infineon Technologies
8.752
In Stock
1 : 1,32000 €
Cut Tape (CT)
1.000 : 0,38545 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel, Depletion Mode
MOSFET (Metal Oxide)
200 V
660mA (Ta)
0V, 10V
1.8Ohm @ 660mA, 10V
1V @ 400µA
14 nC @ 5 V
±20V
430 pF @ 25 V
-
1.8W (Ta)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
PG-SOT223-4
TO-261-4, TO-261AA
DN2450K4-G
MOSFET N-CH 250V 1.1A TO252
Microchip Technology
19.053
In Stock
1 : 1,41000 €
Cut Tape (CT)
2.000 : 1,07963 €
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel, Depletion Mode
MOSFET (Metal Oxide)
250 V
1.1A (Tj)
0V
3.5Ohm @ 1A, 0V
-
7.04 nC @ 1.5 V
±20V
1000 pF @ 25 V
-
-
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
PG-SOT223-4
MOSFET N-CH 600V 120MA SOT223-4
Infineon Technologies
48.877
In Stock
1 : 1,49000 €
Cut Tape (CT)
1.000 : 0,38970 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel, Depletion Mode
MOSFET (Metal Oxide)
600 V
120mA (Ta)
0V, 10V
45Ohm @ 120mA, 10V
1V @ 94µA
4.9 nC @ 5 V
±20V
146 pF @ 25 V
-
1.8W (Ta)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
PG-SOT223-4
TO-261-4, TO-261AA
DN2450K4-G
MOSFET N-CH 650V 300MA TO252-3
Microchip Technology
1.422
In Stock
1 : 2,84000 €
Cut Tape (CT)
2.000 : 2,15926 €
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel, Depletion Mode
MOSFET (Metal Oxide)
650 V
300mA (Tj)
0V
8Ohm @ 150mA, 0V
-
-
±20V
825 pF @ 25 V
-
2.5W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-263AB
MOSFET N-CH 1000V 800MA TO263
IXYS
4.121
In Stock
1 : 3,43000 €
Tube
Tube
Active
N-Channel, Depletion Mode
MOSFET (Metal Oxide)
1000 V
800mA (Tc)
-
21Ohm @ 400mA, 0V
-
14.6 nC @ 5 V
±20V
325 pF @ 25 V
-
60W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263AA
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AB
MOSFET N-CH 500V 6A TO263
IXYS
199
In Stock
1 : 9,02000 €
Tube
Tube
Active
N-Channel, Depletion Mode
MOSFET (Metal Oxide)
500 V
6A (Tc)
-
500mOhm @ 3A, 0V
-
96 nC @ 5 V
±20V
2800 pF @ 25 V
-
300W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263AA
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXTA08N100D2HV
MOSFET N-CH 1700V 1A TO263
IXYS
208
In Stock
1 : 20,24000 €
Tube
Tube
Active
N-Channel, Depletion Mode
MOSFET (Metal Oxide)
1700 V
1A (Tc)
10V
16Ohm @ 500mA, 0V
-
47 nC @ 5 V
±20V
3090 pF @ 25 V
-
290W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263HV
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-268
MOSFET N-CH 1700V 2A TO268
IXYS
734
In Stock
1 : 26,43000 €
Tube
Tube
Active
N-Channel, Depletion Mode
MOSFET (Metal Oxide)
1700 V
2A (Tj)
-
6.5Ohm @ 1A, 0V
-
110 nC @ 5 V
±20V
3650 pF @ 25 V
-
568W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-268AA
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
PG-SOT23-3-5
MOSFET N-CH 600V 21MA SOT23-3
Infineon Technologies
4.496
In Stock
1 : 0,29000 €
Cut Tape (CT)
3.000 : 0,06059 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel, Depletion Mode
MOSFET (Metal Oxide)
600 V
21mA (Ta)
-
500Ohm @ 16mA, 10V
2.7V @ 8µA
1.4 nC @ 5 V
±20V
21 pF @ 25 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-SOT23-3-5
TO-236-3, SC-59, SOT-23-3
PG-SOT23
MOSFET N-CH 60V 230MA SOT23-3
Infineon Technologies
16.683
In Stock
1 : 0,48000 €
Cut Tape (CT)
3.000 : 0,10312 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel, Depletion Mode
MOSFET (Metal Oxide)
60 V
230mA (Ta)
0V, 10V
3.5Ohm @ 160mA, 10V
2.4V @ 26µA
1.4 nC @ 5 V
±20V
39 pF @ 25 V
-
360mW (Ta)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
PG-SOT23
TO-236-3, SC-59, SOT-23-3
MIC5203-3.8YM5-TR
MOSFET N-CH 9V 330MA SOT23-5
Microchip Technology
3.266
In Stock
1 : 0,48000 €
Cut Tape (CT)
3.000 : 0,37139 €
Tape & Reel (TR)
-
Tape & Reel (TR)
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Digi-Reel®
Active
N-Channel, Depletion Mode
MOSFET (Metal Oxide)
9 V
330mA (Tj)
0V
1.4Ohm @ 100mA, 0V
-
-
+0.6V, -12V
46 pF @ 5 V
-
360mW (Ta)
-25°C ~ 125°C (TJ)
-
-
Surface Mount
SOT-23-5
SC-74A, SOT-753
TO-92-3(StandardBody),TO-226_straightlead
MOSFET N-CH 500V 30MA TO92-3
Microchip Technology
3.506
In Stock
1 : 0,52000 €
Bag
-
Bag
Active
N-Channel, Depletion Mode
MOSFET (Metal Oxide)
500 V
30mA (Tj)
0V
1000Ohm @ 500µA, 0V
-
-
±20V
10 pF @ 25 V
-
740mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
PG-SOT23
MOSFET N-CH 250V 100MA SOT23-3
Infineon Technologies
72.098
In Stock
1 : 0,54000 €
Cut Tape (CT)
3.000 : 0,11882 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel, Depletion Mode
MOSFET (Metal Oxide)
250 V
100mA (Ta)
0V, 10V
14Ohm @ 100µA, 10V
1V @ 56µA
3.5 nC @ 5 V
±20V
76 pF @ 25 V
-
360mW (Ta)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
PG-SOT23
TO-236-3, SC-59, SOT-23-3
Showing
of 178

Single FET, MOSFETs


Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

  • Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
  • Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

  1. High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
  2. Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
  3. High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.