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IAR Systems Software Inc.
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Supplier: EPC
Subtitle:
Enhancement Mode Power Transistors
Description:
EPC has developed the world’s first enhancement mode Gallium Nitride devices to be offered on the market.
Category: Semiconductors, Development Tools - Discrete Semiconductors - Transistors, FETs, IGBTs - FETs Single - N-Channel - GaNFET (Gallium Nitride) |
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Supplier: EPC
Subtitle:
Enhancement Mode Power Transistors
Description:
EPC has developed the world’s first enhancement mode Gallium Nitride devices to be offered on the market.
Category: Semiconductors, Development Tools - Discrete Semiconductors - Transistors, FETs, IGBTs - FETs Single - N-Channel - Logic Level Gate |
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Supplier: EPC
Subtitle:
Enhancement Mode GaN Power Transistors
Description:
EPC has developed the world’s first enhancement mode Gallium Nitride devices to be offered on the market.
Category: Semiconductors, Development Tools - Discrete Semiconductors - Transistors, FETs, IGBTs - FETs Arrays - N-Channel - Standard |
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Supplier: EPC
Subtitle:
Power Management Full, Half-Bridge Drivers
Description:
EPC offers full, half-bridge drivers for highly resonant and inductive wireless power and high frequency DC-DC conversion.
Category: Semiconductors, Development Tools - Power Management - Full, Half-Bridge Drivers |
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Supplier: EPC
Subtitle:
EPC9129 - 33W Class 4 Wireless Power Kit
Description:
The EPC9129 wireless power demonstration system is a high efficiency, AirFuel™ Alliance compatible, wireless power transfer demonstration kit capable of delivering up to 33 W into a transmit coil while operating at 6.78 MHz. The popularity of highly resonant wireless power transfer is increasing ...
Category: Semiconductors, Development Tools - Programmers, Development Systems - Evaluation Boards - Evaluation, Demo Boards, Kits - Power Management |
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Supplier: EPC
Subtitle:
EPC9013 Development Board using the EPC2001 100V Enhancement Mode (eGaN®) Field Effect Transistor (FET)
Description:
The EPC9013 development board features the 100 V EPC2001 enhancement mode (eGaN®) field effect transistor (FET) operating up to a 35 A maximum output current with four half bridges in parallel and a single onboard gate drive. The purpose of this development board is to simplify the evaluation pro...
Category: Semiconductors, Development Tools - Programmers, Development Systems - Evaluation Boards - Evaluation, Demo Boards, Kits - Power Management |
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Supplier: EPC
Subtitle:
EPC9017 Development Board for the EPC2001 Enhancement Mode Power Transistor
Description:
The EPC9017 development board is a 100V maximum device voltage, 20A maximum output current, half bridge with onboard gate drives, featuring the EPC2001 enhancement mode (eGaN) field effect transistor (FET). The half bridge configuration contains a single top side device and two parallel bottom de...
Category: Semiconductors, Development Tools - Programmers, Development Systems - Evaluation Boards - Evaluation, Demo Boards, Kits - Power Management |
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Supplier: EPC
Subtitle:
EPC9002C Development Board using the EPC2001C Enhancement Mode (eGaN®) Field Effect Transistor (FET)
Description:
The EPC9002C development board is a 100V maximum device voltage, 10A maximum output current, half bridge with onboard gate drives, featuring the EPC2001C enhancement mode (eGaN®) field effect transistor (FET). The purpose of this development board is to simplify the evaluation process of the EPC2...
Category: Semiconductors, Development Tools - Programmers, Development Systems - Evaluation Boards - Evaluation, Demo Boards, Kits - Power Management |
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Supplier: EPC
Subtitle:
EPC9126HC, 100V High Current Pulsed Laser Diode Driver Demo Board
Description:
The EPC9126 and EPC9126HC development boards are primarily intended to drive laser diodes with high current pulses with total pulse widths as low as 5 ns (10% of peak). The EPC9126 board is shipped with an EPC2016C enhancement mode (eGaN®) field effect transistor (FET), a 100 V maximum device vol...
Category: Semiconductors, Development Tools - Programmers, Development Systems - Evaluation Boards - Evaluation, Demo Boards, Kits - Power Management |
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Supplier: EPC
Subtitle:
Development Boards using the EPC2007 eGaN® 100 V Half Bridge with Gate Drive
Description:
The development boards are a 100V maximum device voltage, 5A maximum output current, half bridge with onboard gate drives, featuring the EPC2007 enhancement mode (eGaN®) field effect transistor (FET). The purpose of this development board is to simplify the evaluation process of the EPC2007 eGaN ...
Category: Semiconductors, Development Tools - Programmers, Development Systems - Evaluation Boards - Evaluation, Demo Boards, Kits - Power Management |
