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Transphorm
GaNFET (Gallium Nitride)
EPC
N-Channel Logic Level Gate FETs
 
Alpha & Omega Semiconductor Inc.
N-Channel MOSFET (Metal Oxide)
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N-Channel Logic Level Gate FETs

Enhancement Mode Power Transistors

EPC

EPC has developed the world’s first enhancement mode Gallium Nitride devices to be offered on the market.

Datasheets:
Features
  • High efficiency
  • Low RDS(on)
  • Low QG
Applications
  • High Speed DC-DC conversion
  • Class D Audio
  • Hard Switched and High Frequency Circuits
Specifications
  • Current - Continuous Drain (Id) @ 25°C:60A (Ta)
  • Drain to Source Voltage (Vdss):30V
  • FET Type:N-Channel
  • Input Capacitance (Ciss) (Max) @ Vds:2300pF
  • Mounting Type:Surface Mount
  • Package / Case:Die
  • Packaging:Tape & Reel (TR)
  • Rds On (Max) @ Id, Vgs:1.3 mOhm @ 40A, 5V
  • Supplier Device Package:Die
  • Technology:GaNFET (Gallium Nitride)
  • Vgs(th) (Max) @ Id:2.5V @ 20mA
  • Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds:15V
Parts
Associated Product
Texas Instruments Half Bridge
Category: Semiconductors, Development Tools-Power Management-Gate Drivers-Half Bridge