Print Print this page
EPC2001C Development Board EPC9126HC
EPC2007 Development Boards
EPC2007C, EPC2038 High Frequency ZVS Class-D Power Amplifier Development Board
  • Images

EPC2007 Development Boards

Development Boards using the EPC2007 eGaN® 100 V Half Bridge with Gate Drive


The development boards are a 100V maximum device voltage, 5A maximum output current, half bridge with onboard gate drives, featuring the EPC2007 enhancement mode (eGaN®) field effect transistor (FET). The purpose of this development board is to simplify the evaluation process of the EPC2007 eGaN FET by including all the critical components on a single board that can be easily connected into any existing converter.

  • Embedded:No
  • Supplied Contents:Board(s)
  • Type:Power Management

View in Parametric Search

EPC9507EPC9507EVAL BOARD GAN ZVS CLASS D AMP Power ManagementWireless Power Supply/ChargingNoEPC2007C, EPC2038RoHS
EPC9006CEPC9006CBOARD DEV FOR EPC2007C 100V Power ManagementHalf H-Bridge Driver (External FET)NoEPC2007CRoHS
EPC9112EPC9112EVAL BOARD CLASS D WIRELESS DEMOPower ManagementWireless Power Supply/ChargingNoEPC2007C, EPC2038RoHS

View in Parametric Search

Associated Product
Wurth Electronics Inc. 61300211121
Category: Interconnect, Wire-Connectors-Rectangular Connectors-Headers - Male Pins-0.100" (2.54mm) Pitch
Wurth Electronics Inc. WE-HCI Series
Category: Passives-Inductors, Coils, Chokes-Fixed-Wirewound-Surface Mount-Metal Composite
Wurth Electronics Inc. WE-CAIR Series
Category: Passives-Inductors, Coils, Chokes-Fixed-Wirewound-Surface Mount-Air
EPC GaNFET (Gallium Nitride)
Category: Semiconductors, Development Tools-Discrete Semiconductors-Transistors, FETs, IGBTs-FETs Single-N-Channel-GaNFET (Gallium Nitride)