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STMicroelectronics
Diode Array
Taiwan Semiconductor Corporation
Diode Array
 
Toshiba Semiconductor and Storage
Diode Array
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Diode Array

Diode Array

Taiwan Semiconductor Corporation

Specifications
  • Current - Average Rectified (Io) (per Diode):200mA ~ 16A
  • Current - Reverse Leakage @ Vr:2.5µA ~ 10µA
  • Current Coupled to Voltage - Forward (Vf) (Max) @ If:150mA ~ 8A
  • Diode Configuration:1 Pair Common Anode ~ 1 Pair Series Connection
  • Diode Type:Standard
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Reverse Recovery Time (trr):6ns ~ 50ns
  • Voltage - DC Reverse (Vr) (Max):70V ~ 600V
  • Voltage - Forward (Vf) (Max) @ If:1.25V ~ 1.7V
  • Voltage Coupled to Current - Reverse Leakage @ Vr:70V ~ 600V
Parts

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BAW56 RFGBAW56 RFGDIODE ARRAY GP 70V 200MA SOT23 1 Pair Common AnodeStandard70V200mATO-236-3, SC-59, SOT-23-3RoHS
UG1008GHC0GUG1008GHC0GDIODE ARRAY GP 600V 10A TO220AB 1 Pair Common CathodeStandard600V10ATO-220-3RoHS
MURF1640CT C0GMURF1640CT C0GDIODE ARRAY GP 400V ITO-220AB 1 Pair Common CathodeStandard400V16ATO-220-3 Full Pack, Isolated TabRoHS
HERF1605G C0GHERF1605G C0GDIODE ARRAY GP 400V ITO-220AB 1 Pair Common CathodeStandard400V16ATO-220-3 Full Pack, Isolated TabRoHS
BAV99 RFGBAV99 RFGDIODE ARRAY GP 70V 200MA SOT23 1 Pair Series ConnectionStandard70V200mATO-236-3, SC-59, SOT-23-3RoHS

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